Location : Introduction Professors Doheyoung Kim

		Doheyoung Kim  Eng. BID. 5B-401  (Lab) 82-62-530-1894  (Cell Phone)  (Fax) 82-62-530-1889  kdhh@chonnam.ac.kr  http://ald.wo.to

¡á	Chemical Engineering Yonsei University, Korea (B.S)
¡á	Chemical Engineering Rensselaer Polytechnic Institute, USA (M.S.)
¡á	Chemical Engineering Rensselaer Polytechnic Institute, USA (Ph.D)

¡á	North Carolina State Univ. Postdoctoral Fellow Center for Advanced Mater. Proc. 1993-1994
¡á	Hyundai Electronics Ind. Co Principal Researcher Central Research Center 1994-1997
¡á	Chonnam National Univ. Associate Prof. Faculty of Applied Chemistry 1997-Present
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¡á	Y-S Kim, J. K. Kim, J.W. Park, D-H Kim, W-J Lee, D-L Cho, and Yo S. Song, Properties of chemically vapor deposited blanket tungsten films on TiN glue layers  prepared by chemical vapor deposition, Metals and Materials, 6(6), pp 577-581, 2000
¡á	S-H Whang, J. K. Kim, J. W. Park,  D-H Kim, D-L Cho and W. J. Lee, Conformality of CVD Tungsten on TiN prepared by metalorganic chemical vapor deposition via cyclic-plasma treatment, Jpn. Journal of Applied Physics, Pt1. 40(1), pp 265-268, 2001
¡á	D-H Kim and B-Y Kim, Morphology and hole filling properties of aluminum films prepared by chemical vapor deposition using dimethylaminealane, Journal of the Electrochemical Society, 148 (1), pp C10-C15, 2001
¡á	Lee WH, Ko YK, Choi JH, Byun IJ, Kwak HT, Kim D-H, Rhee SW, Reucroft PJ, and Lee JG, The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor, Journal of Electronic Materials, 30(8), pp1028-1034, 2001
¡á	Kim, D-H, Kim, J-J, Ha, J-H, Method of forming a conductive layer and an electroplating apparatus there of, U.S.patent 6372116  2002

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¡á	Lab Name : Chemical Process Laboratory for Advanced Materials
¡á	Our research has been focused on fundamental and applied research in the synthesis, properties and processing of materials for use in the electronic and opto-electronic devices.